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Poly Thickness Reduction via Laser Abl/ Laser Induced Oxidation
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Solar Cell
/ Poly Thickness Reduction via Laser Abl/ Laser Induced Oxidation
Poly Thickness Reduction via Laser Abl/ Laser Induced Oxidation
Datasheet
Parameter
Function
1.Poly thickness reduction/removal; 2. Poly Oxidization
Throughput
1.18X≥4800pcs/h,210≥4000psc/h; 2. 18X≥9000pcs/h,210≥9000psc/h
Uptime
≥99%
Breakage
18X≤0.02%,210≤0.03%
MTBF
≥800h
MTTR
≤1h
Compatible wafer size
182-210mm
COmpatible wafer thickness
110-180μm
Laser Power
≥90W
Power stability
≤1%
Pattern precision
±15μm
Repeatability
±10μm
Method
Scanning
Dimension
5560x4000x2800mm(A/B side)
Upstream Integration
Offline/Inline( Depending on customer’s requirement)
Applicable
TOPCon solar cell
Process Overview