Search
Close this search box.

Plasma Enhanced Chemical Vapor Deposition

Plasma Enhanced Chemical Vapor Deposition

Plasma Enhanced Chemical Vapor Deposition

Description

Film deposition via plasma process reaction. A variety of films such as Silicon Carbide/Silicon Nitride/Silicon Oxynitride/ Aluminum Oxide can be deposited. Applicable for PERC, PERT,TOPCon and TBC solar cell.

Parameter
  • Uptime98%
  • Tube I.D430mm/450mm
  • Capacity504~768 pcs/tube
  • Wafer SizeCompatible with 182-230 wafer sizes
  • Non-uniformitywithin-wafer & wafer-to-wafer ≤4%;run-to-run ≤3%
  • Flatzone350-600°C±1°C
  • Base Pressure≤1Pa
Highlights
  • Rapid cooling
  • One-to-one boat transportation system for better stability and performance;
  • Stable thermal & electric field uniformity;
  • Double layer water cooled flange improves sealing and o-ring lifetime;
  • Maintenance-friendly: Quick assembly features for quartz tube and electrodes;
  • Double boat system, film deposition is more uniformed with uniform power distribution
PECVD Uniformity

Plasma Enhanced Chemical Vapor Deposition