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Atomic Layer Deposition System

Atomic Layer Deposition System

Atomic Layer Deposition System

Datasheet
Description

Deposition of the film is formed via alternately pulsing the vapor-phase precursor into the reactor. Applicable for TOPCon solar cells.

Parameter
  • Uptime＞99%
  • Inner Chamber Diameter550*420mm
  • Dual boat capacity3284/3712 pcs
  • Wafer SizeCompatible with various wafer sizes 182-230mm
  • Non-uniformitywithin-wafer & WtW &RtR ≤4%
  • Temperature range150-350℃
  • COnfigurationSingle loading/double loading
Highlights
  • Higher output with both lanes to operate independently
  • Simple upgrades to accomodate large wafer size
  • Maintenance friendly machine design
  • Dual chamber seal for better film uniformity performance
  • Minimal process gas wastage with high precision MFC gas control
Typical ALD film thickness of Top Aluminium boat

Atomic Layer Deposition System

Typical ALD film thickness of Bottom Aluminium boat

Atomic Layer Deposition System

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