The laser film opening equipment adopts a special optical path design to achieve high-speed and efficient film opening, effectively controlling the accuracy of cell patterning; it is compatible with N-type silicon or P-type silicon substrates; it can reduce the line resistance of the metal on the back of the cell, while improving the contact ability, and has extremely good electrical + passivation capabilities.Read more
The film is formed by thermal decomposition in a low-pressure atmosphere. It can prepare silicon oxide and various crystalline silicon films, meeting the requirements of special processes such as tunneling oxidation passivation, and can be used for high-efficiency N-type TOPCon and BC cells.Read more
Low pressure horizontal oxidation/annealing system is suitable for thermal annealing and thermal activation processes of various solar cell structures, suitable for cell applications such as PERC, PERT, TOPCon and BC.Read more
Through high-temperature thermal decomposition and chemical reaction, the growth of borosilicate glass (BSG) and the diffusion and doping of boron atoms are achieved. Applied to silicon wafer oxidation and boron doping.Read more
Through high-temperature thermal decomposition and chemical reaction, the deposition of phosphosilicate glass (PSG) and the diffusion and doping of phosphorus atoms are achieved. Applied to silicon wafer oxidation, phosphorus doping, Poly phosphorus doping and other functions.Read more
By alternately passing gas phase precursor pulses into the reactor, it is absorbed on the deposition substrate and reacts to form a deposited film, which is suitable for cell applications such as TOPCon.Read more
Laser non-destructive etching is to use laser precise control heating and local auxiliary cooling to produce a large temperature gradient in the silicon wafer, so that the material generates thermal stress to the fracture threshold and fracture propagates along the thermal gradient caused by the laser beam path, causing the material to be completely separated.Read more
Uses laser to precisely destroy the passivation layer on the surface of silicon wafers, optimize metal contact and reduce contact resistance to improve the conversion efficiency of solar cells; applicable to TOPCon, xBC half-cell, three-cell, 0BB and other processes.Read more
By alternately passing gas phase precursor pulses into the reactor, it is absorbed on the deposition substrate and reacts to form a deposition film, which is suitable for cell applications such as TOPCon.Read more
Uses high temperature discharge to ionize gas into plasma for reaction deposition into film. Can prepare various thin films such as silicon carbide/silicon nitride/silicon oxynitride/aluminum oxide. Suitable for cell applications such as PERC, PERT, TOPCon and BC.Read more
