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Poly Thickness Reduction via Laser Abl/ Laser Induced Oxidation

Poly Thickness Reduction via Laser Abl/ Laser Induced Oxidation

Poly Thickness Reduction via Laser Abl/ Laser Induced Oxidation

Parameter
  • Function1.Poly thickness reduction/removal; 2. Poly Oxidization
  • Throughput1.18X≥4800pcs/h,210≥4000psc/h; 2. 18X≥9000pcs/h,210≥9000psc/h
  • Uptime ≥99%
  • Breakage 18X≤0.02%,210≤0.03%
  • MTBF ≥800h
  • MTTR ≤1h
  • Compatible wafer size 182-210mm
  • COmpatible wafer thickness 110-180μm
  • Laser Power ≥90W
  • Power stability ≤1%
  • Pattern precision ±15μm
  • Repeatability ±10μm
  • Method Scanning
  • Dimension 5560x4000x2800mm(A/B side)
  • Upstream Integration Offline/Inline( Depending on customer’s requirement)
  • Applicable TOPCon solar cell
Process Overview