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Laser Induced Metallization Equipment

Laser Induced Metallization Equipment

Laser Induced Metallization Equipment

Description

Single laser to precisely destruct the passivation layer on the silicon wafer surface, optimizing metal contacts and reducing contact resistance to improve the efficiency of solar cells; suitable for TOPCon, xBC, half-cut, third-cut, 0BB cells, and other processes.

Technical Effect

Laser Induced Metallization Equipment

Parameter
  • Throughput18X≥9600pcs/h,210≥9000psc/h
  • Uptime99%
  • Breakage182≤0.01%,210≤0.015%
  • Wafer sizeCompatible for 182-210mm
  • Laser Power≥300W
  • Power Stability≤1%
  • Pattern Precision±15um
  • Repeatability Precision±10μm
  • Efficiency gain≥0.35%abs
  • ProcessSingle line scan/ Area scan
Highlights
  • High throughput via dual station processing, typical CT≤0.75s
  • Compatible with third-cut, 0BB, BC solar cells, adaptable to any incoming cell orientation
  • Linear transport mechanism to improve the positioning accuracy of incoming materials.
  • Large spot approach for easier tuning, shaped beam is maintenance free
  • On-time removal of NG wafers via realtime monitoring of process current and voltage