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Low Pressure Chemical Vapor Deposition

Low Pressure Chemical Vapor Deposition

Low Pressure Chemical Vapor Deposition

Description

To deposit various films required for tunneling oxide passivation especially for high efficiency TOPCon and TBC solar cells via thermal reactions under low pressure process environment.

Parameter
  • Uptime95%
  • Tube I.D 430 – 480mm
  • Capacity Double Load 2400-2880 pcs/tube
  • Wafer Size Compatible with 182-230 wafer size
  • Non-Uniformity within-wafer & wafer-to-wafer ≤4%;run-to-run ≤3%
  • Temperature Range 400 – 750 °C
Highlights
  • Matured technology, high quality yield, copy-and-paste duplication with ease
  • Double loading performance as good as single loading
  • Innovative 4 segment thermal field, equipped with ATS system for better temperature control accuracy
  • Multi gas injection design for better film uniformity
  • Nano-coated quartz tube for longer tube lifetime
  • No metal parts within tube, improving process tability
  • Fully automated intelligent control system
  • Thicker pump exhaust piping for less maintenance hassle
  • One-click temperature self-tuning function for easier tuning
Deposition Result

Low Pressure Chemical Vapor Deposition

Measurement

Low Pressure Chemical Vapor Deposition