Characterization & Analysis
Microcrack Inspection
Description: Between texturing to pre-printing processes, combined with automation to pick out cells
with microcracks and chipped edges, reducing losses in subsequent processes caused by microcracks.
Parameter:Throughput ≥3600pcs/hour
Missed-detection ≤0.1%
False-detection ≤0.1%
Cassette Detection
Description: The cassette inspection system performs fragments, liquid stain, overlapping, cross-slot, and chipping inspections inside the cassette at the unloading station.
Parameter:Measurement time 8s
Missed-detection ≤0.5%
False-detection ≤0.5%
Fragments Detection
Description: Fragments detection can be installed at load-and-unload station, mainly to detect chipped wafers.
Parameter:Throughput ≥6000pcs/hour/station
Missed-detection ≤0.1%
False-detection ≤0.2%
Graphite Boat Inspection
Description: For PECVD process, to inspect wafers bending, broken wafers, boat deformation, screw loosening.
Parameter:Single boat measurement time ≤8s
Missed-detection ≤0.1%
False-detection ≤0.1%
Sheet Resistance Measurement
Description: Non-destructive inline sheet resistance measurement utilizes photoelectric voltage method for mass production quality control with high throughput.
Parameter:Measurement speed 5ms/ point, spot size 8mm; measurement range 20-400Ω/sq; Error-tolerance ≤3%
Reflectomer
Description: Surface reflectivity measurement of wafer surface, automated measurement for better quality control.
Parameter:Wavelength 350-1050nm
Reflectivity:0-100%
Measurement time＜0.2S per
point;Resolution＜0.05
Spectrometer
Description: The optical parameters of thin film materials (thickness, refractive index, extinction coefficient) are computed with complex algorithm by irradiating silicon wafers with specific wavelengths. For yield quality process control of Poly-Si deposition process.
Parameter:Single point measurement time <0.5s；Resolution ±1nm；Repeatability (static) 1nm
Optical Inspection
Description: For PECVD process, color and defect sorting for postdeposition wafers at automation station.
Parameter:≥ throughput larger than automation
Missed-detection ≤0.1%
False-detection ≤0.3%
Optical/PL Inspection
Description: For PECVD process, defective cells are identified and sorted out using a combination of AOI (Automated Optical Inspection) for external appearance and PL (Photoluminescence) for internal defects for post deposition wafers at automation station.
Parameter:≥ throughput larger than automation
Missed-detection ≤0.3%
False-detection ≤0.5%