Search
Close this search box.

Low Pressure Horizontal Placement Boron Diffusion Equipment

Low Pressure Horizontal Placement Boron Diffusion Equipment

Low Pressure Horizontal Placement Boron Diffusion Equipment

Description

Enabling oxidation, BSG growth and Boron diffusion process via thermal and chemical reactions.

Parameter
  • Uptime98%
  • Tube I.D 430 – 480mm
  • Capacity2400~2880 pcs/tube
  • Wafer Size Compatible with 182-230 wafer sizes
  • Sheet Resistance non-uniformitywithin-wafer & wafer-to-wafer ≤5%;run-to-run ≤4%
  • Temperature600 – 1050 °C
  • OptionalWater Oxygen,online diaphragm pump cleaning
Highlights
  • High capacity with double loading
  • Innovative 4 segment heater + ATS system for better temperature control
  • Door flange with purge-ring design for longer maintenance cycle
  • New water-cooled furnace door system
  • New cooling purification area
  • Fully automatic intelligent control system
  • One-click temperature auto tuning function
  • New automatic purge mode to improve pump and consumable parts maintenance cycles
Deposition Result

Low Pressure Horizontal Placement Boron Diffusion Equipment