Description (EPD)

To deposit an AlOx passivation layer on the edges of the laser cut edges via ALD process, suitable for TOPCon cell applications.

Parameter

• FunctionLaser dicing
• Wafer size compatibleLength 182-230mm; Thickness 110-230um
• Throughput≥12000pcs/h
• Breakage≤0.02%@182;≤0.03%@210
• Uptime≥98.5%
• Laser PowerContact Opening ≥50W，Dicing ≥300W
• Laser performancePower stability ≤2%RMS，annual degradation <3%
• Dicing precision±0.1mm
• Defect inspection≥0.5mm*0.5mm
• Water consumption<1L / every 10,000 wafers

EPD film deposition distribution at various position

EPD Parameter

• Uptime99%
• Loading21600 half-cut
• Non-uniformitywithin-wafer & wafer-to-wafer ≤4%，run-to-run≤3%
• Temperature control4-segment heater：12 zones independant temperature control，compatbile for 400℃ annealing process
• ProcessTube-type ALD，TMA+water
• ConfigurationVarious online/offline solutions depending on the needs of customer

Module Power Gain

• Power Gain+5.2W
• Voc Gain+0.088V
• Isc Gain+0.008A
• FF Gain+0.41%

Parameter

• Throughput≥7200 pcs/h(half-cut)
• Uptime≥98.5%(100%-machine failure)
• Breakage100um-145um ≤ 0.1% (Broken pieces/input wafers)
• AOI ResolutionEdge chipping: 120um x120um Stain, foreign objects :200umx200um
• Voltage Test Resolution0.0001V
• Current Test Resolution0.0001A
• IV variation (Sweep Mode)Sweep-mode variation <0.05%，steady-state variation <0.02%，Each sweep EFF max range ≤0.05%
• Min. EL detectable size0.5mm*0.5mm
• Class Binning≥120 bins (single side)